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NUS1204MN
MAXIMUM RATINGS (T A = 25 ° C unless otherwise stated)
Rating
OUT Voltage to GND
Input Pin Voltage to GND
Pin
2
4
?
Symbol
V O
V input
P D
Min
?0.3
?0.3
?
Max
12
12
0.96
Unit
V
V
W
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
OVP IC
P?Channel FET
?
?
?
?
2,3,4
R θ JA
T J
T A
T stg
?
?
?
?40
?65
2.5
130
130
150
85
150
?
° C/W
° C
° C
° C
kV
Drain?to?Source Voltage
V DSS
?12
V
Gate?to?Source Voltage
Continuous Drain Current, Steady State, T A = 25 ° C (Note 1)
V GS
I D
?8
8
?0.6
V
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface?mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 3015?7, (R = 1500 W , C = 100 pF, F = 3 pulses delay 1 s).
ELECTRICAL CHARACTERISTICS (T A = 25 ° C, Vcc = 6.0 V, unless otherwise specified)
Characteristic
Input Threshold (Pin 4, V in Increasing)
Input Threshold Hysteresis (Pin 4, V in Decreasing)
Symbol
V TH
V HYS
Min
4.630
0.135
Typ
4.725
0.225
Max
4.820
0.315
Unit
V
V
Supply Current (Pin 4)
I in
m A
(V in = 4.34 V)
(V in = 6.5 V)
?
?
?
?
3.0
3.9
Minimum Operating Voltage (Pin 4) (Note 3)
(T A = 25 ° C)
(T A = ?40 ° C to 85 ° C)
Output Voltage High (V in = 8.0 V; I Source = 1.0 mA)
V in(min)
V oh
?
?
V in ?1.0
0.55
0.65
?
0.70
0.80
?
V
V
Output Voltage High (V in = 8.0 V; I Source = 0.25 mA)
Output Voltage High (V in = 8.0 V; I Source = 0 mA)
V in ?0.25
V in ?0.1
Output Voltage Low
V ol
?
?
0.1
V
(Input < 4.5 V; I Sink = 0 mA; CNTRL = 0 V)
Propagation Delay Input to Output
Complementary Output NCP304 Series
m s
Output Transition, High to Low
Output Transition, Low to High
t pHL
t pLH
?
?
10
21
?
60
3. Guaranteed by design.
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